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公开(公告)号：US10347793B2
公开(公告)日：2019-07-09
申请号：US15784905
申请日：2017-10-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L33/40 , H01L33/38 , H01L33/00 , H01L29/225 , H01L29/205 , H01L31/0336 , H01L29/267 , H01L31/00 , H01L33/14 , H01L31/0224 , H01L33/24 , H01L33/08
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
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公开(公告)号：US09911895B2
公开(公告)日：2018-03-06
申请号：US15069178
申请日：2016-03-14
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
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公开(公告)号：US09818912B2
公开(公告)日：2017-11-14
申请号：US14934482
申请日：2015-11-06
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Alexander Dobrinsky , Maxim S. Shatalov , Remigijus Gaska , Michael Shur
CPC classification number: H01L33/405 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46
Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
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公开(公告)号：US09923117B2
公开(公告)日：2018-03-20
申请号：US14984156
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/10 , H01L33/007 , H01L33/12 , H01L33/32 , H01L33/46
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
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公开(公告)号：US20180053879A1
公开(公告)日：2018-02-22
申请号：US15784905
申请日：2017-10-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L33/38 , H01L33/14 , H01L31/0224 , H01L33/00 , H01L33/40 , H01L31/00 , H01L33/08 , H01L33/24
CPC classification number: H01L33/40 , H01L29/205 , H01L29/225 , H01L29/267 , H01L31/00 , H01L31/022408 , H01L31/03365 , H01L33/002 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
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Patent Agency Ranking
公开(公告)号：US09184346B2
公开(公告)日：2015-11-10
申请号：US13711675
申请日：2012-12-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Alexander Dobrinsky , Maxim S. Shatalov , Remigijus Gaska , Michael Shur
CPC classification number: H01L33/32 , H01L29/2003 , H01L29/45 , H01L33/387 , H01L33/405 , H01L33/42
Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
Abstract translation: 提供了包括欧姆层和位于欧姆层上的反射层的触点。 欧姆层对具有目标波长的辐射是透明的，而反射层对于具有目标波长的辐射具有至少约百分之八十。 目标波长可以是紫外光，例如波长在约260和约360纳米之间的波长范围内。
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公开(公告)号：US20140239312A1
公开(公告)日：2014-08-28
申请号：US14189012
申请日：2014-02-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
IPC: H01L33/32
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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公开(公告)号：US20130146907A1
公开(公告)日：2013-06-13
申请号：US13711675
申请日：2012-12-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Alexander Dobrinsky , Maxim S. Shatalov , Remigijus Gaska , Michael Shur
CPC classification number: H01L33/32 , H01L29/2003 , H01L29/45 , H01L33/387 , H01L33/405 , H01L33/42
Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
Abstract translation: 提供了包括欧姆层和位于欧姆层上的反射层的触点。 欧姆层对具有目标波长的辐射是透明的，而反射层对于具有目标波长的辐射具有至少约百分之八十。 目标波长可以是紫外光，例如波长在约260和约360纳米之间的波长范围内。
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公开(公告)号：US09793439B2
公开(公告)日：2017-10-17
申请号：US14984511
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/382 , H01L31/00 , H01L31/022408 , H01L33/002 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/38 , H01L33/40 , H01L33/405
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
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公开(公告)号：US20160155902A1
公开(公告)日：2016-06-02
申请号：US14934482
申请日：2015-11-06
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Alexander Dobrinsky , Maxim S. Shatalov , Remigijus Gaska , Michael Shur
CPC classification number: H01L33/405 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46
Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
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