Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14275858Application Date: 2014-05-12
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Publication No.: US09196726B2Publication Date: 2015-11-24
- Inventor: Jian-Cun Ke , Chih-Wei Yang , Chia-Fu Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410138718 20140408
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336 ; H01L29/78 ; H01L29/66 ; H01L29/51 ; H01L29/49 ; H01L21/265 ; H01L21/02
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.
Public/Granted literature
- US20150287823A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-10-08
Information query
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