Invention Grant
US09202860B2 Method for fabricating capacitor having rutile titanium oxide dielectric film
有权
制造具有金红石型氧化钛电介质膜的电容器的方法
- Patent Title: Method for fabricating capacitor having rutile titanium oxide dielectric film
- Patent Title (中): 制造具有金红石型氧化钛电介质膜的电容器的方法
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Application No.: US14147603Application Date: 2014-01-06
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Publication No.: US09202860B2Publication Date: 2015-12-01
- Inventor: Chun-I Hsieh , Vishwanath Bhat
- Applicant: NANYA TECHNOLOGY CORP.
- Applicant Address: TW Gueishan Dist., Taoyuan
- Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee Address: TW Gueishan Dist., Taoyuan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02 ; C23C16/40 ; C23C16/455
Abstract:
A method for fabricating a capacitor includes: (1) forming a bottom electrode on a substrate; (2) forming a template layer on the bottom electrode; (3) performing a plurality of atomic layer deposition (ALD) cycles by using water vapor as an oxidant thereby depositing a first TiO2 layer on the template layer; and (4) performing ozone pulse and purge step to transform entire thickness of the first TiO2 layer into rutile phase.
Public/Granted literature
- US20140134821A1 METHOD FOR FABRICATING CAPACITOR HAVING RUTILE TITANIUM OXIDE DIELECTRIC FILM Public/Granted day:2014-05-15
Information query
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