Invention Grant
- Patent Title: Maskless hybrid laser scribing and plasma etching wafer dicing process
-
Application No.: US14454656Application Date: 2014-08-07
-
Publication No.: US09209084B2Publication Date: 2015-12-08
- Inventor: Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
- Applicant: Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L21/3065 ; H01L21/82 ; B23K26/00 ; B23K26/06

Abstract:
Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.
Public/Granted literature
- US20150111364A1 MASKLESS HYBRID LASER SCRIBING AND PLASMA ETCHING WAFER DICING PROCESS Public/Granted day:2015-04-23
Information query
IPC分类: