Invention Grant
- Patent Title: Integrated monolithic galvanic isolator
- Patent Title (中): 集成单片电流隔离器
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Application No.: US13198833Application Date: 2011-08-05
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Publication No.: US09209091B1Publication Date: 2015-12-08
- Inventor: David Harper , Sudarsan Uppili , Fanling Hsu Yang , David L. Snyder , Christopher S. Blair , Guillaume Bouche
- Applicant: David Harper , Sudarsan Uppili , Fanling Hsu Yang , David L. Snyder , Christopher S. Blair , Guillaume Bouche
- Applicant Address: US CA San Jose
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Advent, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L27/12
Abstract:
A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.
Information query
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