Invention Grant
US09214461B2 GaN transistors with polysilicon layers for creating additional components
有权
具有多晶硅层的GaN晶体管用于产生额外的部件
- Patent Title: GaN transistors with polysilicon layers for creating additional components
- Patent Title (中): 具有多晶硅层的GaN晶体管用于产生额外的部件
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Application No.: US14445988Application Date: 2014-07-29
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Publication No.: US09214461B2Publication Date: 2015-12-15
- Inventor: Jianjun Cao , Robert Beach , Alexander Lidow , Alana Nakata , Guangyuan Zhao , Yanping Ma , Robert Strittmatter , Michael A. De Rooji , Chunhua Zhou , Seshadri Kolluri , Fang Chang Liu , Ming-Kun Chiang , Jiali Cao , Agus Jauhar
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Coversion Corporation
- Current Assignee: Efficient Power Coversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L27/085 ; H01L29/40 ; H01L21/8258 ; H01L29/417 ; H01L21/763 ; H01L29/10 ; H01L29/20
Abstract:
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
Public/Granted literature
- US20150028384A1 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS Public/Granted day:2015-01-29
Information query
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