Invention Grant
US09214787B2 III-V photonic crystal microlaser bonded on silicon-on-insulator
有权
结合在绝缘体上的III-V光子晶体微激光器
- Patent Title: III-V photonic crystal microlaser bonded on silicon-on-insulator
- Patent Title (中): 结合在绝缘体上的III-V光子晶体微激光器
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Application No.: US14690198Application Date: 2015-04-17
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Publication No.: US09214787B2Publication Date: 2015-12-15
- Inventor: Seheon Kim , William Dos Santos Fegadolli , Axel Scherer
- Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Applicant Address: US CA Pasadena
- Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Current Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/227 ; H01S5/10 ; B82Y20/00 ; H01S5/20 ; H01S5/22 ; H01S5/30 ; H01S5/02 ; H01S5/026 ; H01S5/042 ; H01S5/32 ; H01S5/343
Abstract:
Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.
Public/Granted literature
- US20150222092A1 III-V PHOTONIC CRYSTAL MICROLASER BONDED ON SILICON-ON-INSULATOR Public/Granted day:2015-08-06
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