Invention Grant
US09221677B2 Composite sacrificial structure for reliably creating a contact gap in a MEMS switch
有权
用于在MEMS开关中可靠地产生接触间隙的复合牺牲结构
- Patent Title: Composite sacrificial structure for reliably creating a contact gap in a MEMS switch
- Patent Title (中): 用于在MEMS开关中可靠地产生接触间隙的复合牺牲结构
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Application No.: US12973105Application Date: 2010-12-20
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Publication No.: US09221677B2Publication Date: 2015-12-29
- Inventor: Sangchae Kim
- Applicant: Sangchae Kim
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B81C1/00 ; H01H1/00 ; H01H59/00
Abstract:
The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device.
Public/Granted literature
- US20120156820A1 COMPOSITE SACRIFICIAL STRUCTURE FOR RELIABLY CREATING A CONTACT GAP IN A MEMS SWITCH Public/Granted day:2012-06-21
Information query
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