Invention Grant
US09224773B2 Metal shielding layer in backside illumination image sensor chips and methods for forming the same
有权
背面照明图像传感器芯片中的金属屏蔽层及其形成方法
- Patent Title: Metal shielding layer in backside illumination image sensor chips and methods for forming the same
- Patent Title (中): 背面照明图像传感器芯片中的金属屏蔽层及其形成方法
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Application No.: US13420279Application Date: 2012-03-14
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Publication No.: US09224773B2Publication Date: 2015-12-29
- Inventor: Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
- Applicant: Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
Public/Granted literature
- US20130134541A1 Metal Shielding Layer in Backside Illumination Image Sensor Chips and Methods for Forming the Same Public/Granted day:2013-05-30
Information query
IPC分类: