Invention Grant
- Patent Title: Semiconductor switch circuit
- Patent Title (中): 半导体开关电路
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Application No.: US14194627Application Date: 2014-02-28
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Publication No.: US09225229B2Publication Date: 2015-12-29
- Inventor: Hiroyuki Abe , Hironori Nagasawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-074969 20130329
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H02M1/08 ; H03K17/06

Abstract:
A semiconductor switch circuit includes a switch between an input node and an output node that connects nodes to each other according to a control signal and a level shifter outputting the control signal at a boosted level that is greater than a power supply voltage level. The semiconductor switch circuit also includes a booster circuit to output a boosted voltage at the boosted level higher than a power supply voltage level. A control circuit is configured to control the level shifter output of the control signal to the switch. A capacitance switching circuit is included to change the capacitance of a connection between the booster circuit and the level shifter. The capacitance switching circuit can vary capacitance according to the voltage level of the booster circuit output.
Public/Granted literature
- US20140292302A1 SEMICONDUCTOR SWITCH CIRCUIT Public/Granted day:2014-10-02
Information query
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