Invention Grant
- Patent Title: Capacitor and method of manufacturing the same
- Patent Title (中): 电容器及其制造方法
-
Application No.: US14249340Application Date: 2014-04-09
-
Publication No.: US09230966B2Publication Date: 2016-01-05
- Inventor: Sanjeev Sapra , Brett W. Busch , Jian Li , Chad Patrick Blessing , Greg Allen Funston
- Applicant: NANYA TECHNOLOGY CORP.
- Applicant Address: TW Gueishan Dist., Taoyuan
- Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee Address: TW Gueishan Dist., Taoyuan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/108 ; H01L49/02 ; H01L21/02
Abstract:
A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.
Public/Granted literature
- US20150294971A1 CAPACITOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-10-15
Information query
IPC分类:
