Invention Grant
- Patent Title: Light-emitting diode chip
- Patent Title (中): 发光二极管芯片
-
Application No.: US14270305Application Date: 2014-05-05
-
Publication No.: US09231165B2Publication Date: 2016-01-05
- Inventor: Wen-Yuan Fan , Nai-Wei Hsu
- Applicant: LEXTAR ELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Priority: TW102148950A 20131230
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/42 ; H01L33/38

Abstract:
A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.
Public/Granted literature
- US20150187997A1 LIGHT-EMITTING DIODE CHIP Public/Granted day:2015-07-02
Information query
IPC分类: