LED package structure
    2.
    发明授权

    公开(公告)号:US12284853B2

    公开(公告)日:2025-04-22

    申请号:US18393602

    申请日:2023-12-21

    Inventor: Chien-Hsin Tu

    Abstract: A light emitting diode (LED) package structure include an electrically-insulated frame, a trough, a LED chip, a fluorescent colloid and at least two spacing members. The electrically-insulated frame has a surface with four corners. The trough is recessed in the surface. The LED chip is located in the trough. The fluorescent colloid is filled within the trough to cover the LED chip. The spacing members protrude from two of the four corners on the surface, wherein a glue escape gap is defined between each spacing member and a boundary of the trough.

    PACKAGE STRUCTURE
    3.
    发明申请

    公开(公告)号:US20250098384A1

    公开(公告)日:2025-03-20

    申请号:US18777486

    申请日:2024-07-18

    Abstract: A package structure is provided. The package structure includes a lead frame, a first connecting piece, a light-emitting diode, an engaging protrusion, and a fluorescent encapsulant. The lead frame has an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first connecting piece is disposed at the center of the upper surface. The light-emitting diode is disposed on the first connecting piece. The engaging protrusion is disposed on the periphery of the upper surface. The fluorescent encapsulant is disposed on the upper surface and covers the light-emitting diode and the engaging protrusion.

    Light emitting device
    4.
    发明授权

    公开(公告)号:US12119427B2

    公开(公告)日:2024-10-15

    申请号:US18336040

    申请日:2023-06-16

    Abstract: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.

    DETECTION ELEMENT AND A WEARABLE DEVICE OF BIOLOGICAL SUBCUTANEOUS FEATURE INCLUDING THE SAME

    公开(公告)号:US20240315615A1

    公开(公告)日:2024-09-26

    申请号:US18610147

    申请日:2024-03-19

    CPC classification number: A61B5/14552

    Abstract: A detection element of biological subcutaneous features and a wearable device thereof are provided. The element for detecting biological subcutaneous features has a substrate, a light-detecting semiconductor chip, a grid structure, and a cover. The light-detecting semiconductor chip is located on the substrate for detecting red light or near-infrared light signals. The grid structure including a plurality of opaque light-absorbing blocking walls is located on the light-detecting semiconductor chip for blocking side light and increasing the proportion of near-vertical incident light. The cover is located on the grid structure and serves as a protection lid. The wearable device for detecting biological subcutaneous features has more than one light source of red light or near-infrared light and a plurality of detection elements. The arrangement of the opaque light-absorbing blocking walls that are parallel to each other are substantially parallel to the light-emitting directions of the light source.

    MICRO LIGHT-EMITTING DIODE PIXEL STRUCTURE AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20240313180A1

    公开(公告)日:2024-09-19

    申请号:US18498743

    申请日:2023-10-31

    CPC classification number: H01L33/62 H01L25/0753 H01L33/24 H01L2933/0066

    Abstract: A micro light-emitting diode pixel structure and a method for forming the same are provided. The micro light emitting diode pixel structure includes micro light emitting diode chips, redistribution layers, bonding pads, an insulating layer, a flexible material layer and a first hard mask pattern. The redistribution layers are electrically connected to electrode surfaces of the micro light-emitting diode chips. The bonding pads are disposed under the redistribution layers. The insulation layer is disposed between the redistribution layers and the bonding pads. The flexible material layer disposed on the insulating layer to cover the micro light-emitting diode chips, the redistribution layers and insulation layer. The first hard mask pattern is disposed under or above the flexible material layers. In a cross-sectional view, the first hard mask pattern has a first edge and the flexible material layer has a second edge flush with the first edge.

    LIGHT EMITTING DIODE DEVICE
    8.
    发明公开

    公开(公告)号:US20240204159A1

    公开(公告)日:2024-06-20

    申请号:US18590915

    申请日:2024-02-28

    Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

    Light-emitting element and display device using the same

    公开(公告)号:US11984544B2

    公开(公告)日:2024-05-14

    申请号:US17446170

    申请日:2021-08-27

    Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

    Light emitting diode device
    10.
    发明授权

    公开(公告)号:US11961951B2

    公开(公告)日:2024-04-16

    申请号:US17383402

    申请日:2021-07-22

    Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

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