Invention Grant
- Patent Title: Method for forming memory device
- Patent Title (中): 用于形成存储器件的方法
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Application No.: US14474883Application Date: 2014-09-02
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Publication No.: US09231208B2Publication Date: 2016-01-05
- Inventor: Meng-Heng Lin , Bo-Lun Wu
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103112803A 20140408
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A method includes forming a resistance-switching layer and a second electrode over a first electrode. The method includes applying a forming voltage to the resistance-switching layer such that the resistance of the resistance-switching layer is decreased. The method includes applying an initial reset voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is increased. The method includes applying a first set voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased. The method includes applying a second reset voltage to first electrode or the second electrode such that the resistance of the resistance-switching layer is increased. The method includes applying a second set voltage to first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased. The second set voltage is lower than the first set voltage.
Public/Granted literature
- US20150287919A1 METHOD FOR FORMING MEMORY DEVICE Public/Granted day:2015-10-08
Information query
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