Invention Grant
- Patent Title: Lithography model for 3D resist profile simulations
- Patent Title (中): 3D抗蚀剂轮廓模拟的平版印刷模型
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Application No.: US13757472Application Date: 2013-02-01
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Publication No.: US09235662B2Publication Date: 2016-01-12
- Inventor: Peng Liu
- Applicant: Peng Liu
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20

Abstract:
Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.
Public/Granted literature
- US20130204594A1 Lithography Model For 3D Resist Profile Simulations Public/Granted day:2013-08-08
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