Invention Grant
- Patent Title: Method of manufacturing light-absorbing layer having semiconductor nanoparticles and method of manufacturing semiconductor device having the same light-absorbing layer
- Patent Title (中): 制造具有半导体纳米颗粒的光吸收层的方法及具有相同光吸收层的半导体器件的制造方法
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Application No.: US14149529Application Date: 2014-01-07
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Publication No.: US09246116B2Publication Date: 2016-01-26
- Inventor: Changhee Lee , Kookheon Char , Seonghoon Lee , Donggu Lee , Jaehoon Lim , Jiyun Song
- Applicant: SNU R&DB FOUNDATION
- Applicant Address: KR Seoul
- Assignee: SNU R&DB FOUNDATION
- Current Assignee: SNU R&DB FOUNDATION
- Current Assignee Address: KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0076427 20130701
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/42 ; B82Y40/00
Abstract:
An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.
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