Invention Grant
- Patent Title: III-N device structures having a non-insulating substrate
- Patent Title (中): 具有非绝缘衬底的III-N器件结构
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Application No.: US13231308Application Date: 2011-09-13
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Publication No.: US09257547B2Publication Date: 2016-02-09
- Inventor: Nicholas Fichtenbaum , Lee McCarthy , Yifeng Wu
- Applicant: Nicholas Fichtenbaum , Lee McCarthy , Yifeng Wu
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L29/20 ; H01L29/778 ; H01L29/66
Abstract:
Embodiments of the present disclosure includes a III-N device having a substrate layer, a first III-N material layer on one side of the substrate layer, a second III-N material layer on the first III-N material layer, and a barrier layer disposed on another side of the substrate layer, the barrier layer being less electrically conductive than the substrate layer.
Public/Granted literature
- US20130062621A1 III-N DEVICE STRUCTURES HAVING A NON-INSULATING SUBSTRATE Public/Granted day:2013-03-14
Information query
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