Invention Grant
- Patent Title: Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
- Patent Title (中): 半导体衬底上的单片集成多传感器器件及其方法
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Application No.: US14207419Application Date: 2014-03-12
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Publication No.: US09266717B2Publication Date: 2016-02-23
- Inventor: Bishnu Prasanna Gogoi
- Applicant: Versana Micro Inc.
- Applicant Address: US AZ Scottsdale
- Assignee: VERSANA MICRO INC
- Current Assignee: VERSANA MICRO INC
- Current Assignee Address: US AZ Scottsdale
- Main IPC: B81B7/02
- IPC: B81B7/02 ; H01L27/14 ; H01L27/22 ; H01L27/16 ; H05K7/02 ; H01L41/113

Abstract:
An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.
Public/Granted literature
- US20140264657A1 MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR Public/Granted day:2014-09-18
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