Invention Grant
- Patent Title: Micro-plasma field effect transistors
- Patent Title (中): 微等离子体场效应晶体管
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Application No.: US14608298Application Date: 2015-01-29
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Publication No.: US09269521B2Publication Date: 2016-02-23
- Inventor: Massood Tabib-Azar
- Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION
- Applicant Address: US UT Salt Lake City
- Assignee: UNIVERSITY OF UTAH RESEARCH FOUNDATION
- Current Assignee: UNIVERSITY OF UTAH RESEARCH FOUNDATION
- Current Assignee Address: US UT Salt Lake City
- Agency: Michael Best & Friedrich LLP
- Main IPC: H01J17/46
- IPC: H01J17/46 ; H01J17/06 ; H01J17/49 ; H01J17/04 ; H01J17/16

Abstract:
In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.
Public/Granted literature
- US20150162158A1 MICRO-PLASMA FIELD EFFECT TRANSISTORS Public/Granted day:2015-06-11
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