Invention Grant
US09269593B2 Multilayer electronic structure with integral stepped stacked structures
有权
多层电子结构,具有一体式阶梯式堆叠结构
- Patent Title: Multilayer electronic structure with integral stepped stacked structures
- Patent Title (中): 多层电子结构,具有一体式阶梯式堆叠结构
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Application No.: US13482099Application Date: 2012-05-29
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Publication No.: US09269593B2Publication Date: 2016-02-23
- Inventor: Dror Hurwitz
- Applicant: Dror Hurwitz
- Applicant Address: CN Zhuhai
- Assignee: Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd.
- Current Assignee: Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd.
- Current Assignee Address: CN Zhuhai
- Agency: Wiggin and Dana LLP
- Agent Gregory S. Rosenblatt; Jonathan D. Hall
- Main IPC: H05K1/09
- IPC: H05K1/09 ; H05K3/46 ; H05K1/00 ; H05K1/11 ; H05K1/02 ; H01L21/48 ; H01L23/367 ; H01L23/498

Abstract:
A multilayer electronic support structure comprising a plurality of layers extending in an X-Y plane consisting of a dielectric material surrounding metal via posts that conduct in a Z direction perpendicular to the X-Y plane, wherein a stacked via structure crossing at least two via layers of the plurality of layers comprises at least two via posts in neighboring via layers wherein the at least two stacked via posts in neighboring layers have different dimensions in the X-Y plane, such that the stacked via structure tapers.
Public/Granted literature
- US20130319737A1 MULTILAYER ELECTRONIC STRUCTURE WITH INTEGRAL STEPPED STACKED STRUCTURES Public/Granted day:2013-12-05
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