Invention Grant
- Patent Title: Plasma processing apparatus and diagnosis method thereof
- Patent Title (中): 等离子体处理装置及其诊断方法
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Application No.: US13612919Application Date: 2012-09-13
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Publication No.: US09273394B2Publication Date: 2016-03-01
- Inventor: Masahiro Nagatani , Yoshifumi Ogawa
- Applicant: Masahiro Nagatani , Yoshifumi Ogawa
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2012-174522 20120807
- Main IPC: G01F7/00
- IPC: G01F7/00 ; B05C11/00 ; C23C16/455 ; C23C16/52 ; G05D7/06

Abstract:
A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate.
Public/Granted literature
- US20140041804A1 PLASMA PROCESSING APPARATUS AND DIAGNOSIS METHOD THEREOF Public/Granted day:2014-02-13
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