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US09274279B1 Heterogeneous semiconductor photonic integrated circuit with multiple offset heights 有权
具有多个偏移高度的非均匀半导体光子集成电路

Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
Abstract:
Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).
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