Invention Grant
US09274279B1 Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
有权
具有多个偏移高度的非均匀半导体光子集成电路
- Patent Title: Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
- Patent Title (中): 具有多个偏移高度的非均匀半导体光子集成电路
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Application No.: US14510398Application Date: 2014-10-09
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Publication No.: US09274279B1Publication Date: 2016-03-01
- Inventor: Jonathan Edgar Roth , Jae Shin , Gregory Alan Fish
- Applicant: Aurrion, Inc.
- Applicant Address: US CA Goleta
- Assignee: Aurrion, Inc.
- Current Assignee: Aurrion, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G02B6/136
- IPC: G02B6/136 ; G02B6/132

Abstract:
Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).
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