Invention Grant
- Patent Title: Memory chip with error detection and retry modes of operation
- Patent Title (中): 具有错误检测和重试操作模式的内存芯片
-
Application No.: US14828013Application Date: 2015-08-17
-
Publication No.: US09274892B2Publication Date: 2016-03-01
- Inventor: Ely K. Tsern , Mark A. Horowitz , Frederick A. Ware
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F3/06 ; G11C29/52 ; G06F11/14 ; G06F11/10 ; G06F11/07 ; H04L1/00 ; H04L1/08 ; H04L1/18

Abstract:
A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.
Public/Granted literature
- US20150378818A1 Memory Chip With Error Detection And Retry Modes Of Operation Public/Granted day:2015-12-31
Information query