Invention Grant
- Patent Title: Compound semiconductor integrated circuit and method to fabricate same
- Patent Title (中): 复合半导体集成电路及其制造方法
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Application No.: US13960987Application Date: 2013-08-07
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Publication No.: US09275854B2Publication Date: 2016-03-01
- Inventor: Kangguo Cheng , Bruce B Doris , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: GLOBALFOUNDRIES U.S. 2 LLC
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/088 ; H01L21/8252 ; H01L27/06 ; H01L29/201
Abstract:
A structure includes a substrate having a surface and a first transistor disposed in a first region supported by the surface of the substrate. The first transistor has a channel formed in a first compound (Group III-V) semiconductor having a first energy bandgap. The structure further includes a second transistor disposed in a second region supported by the substrate. The second transistor has a channel formed in a second compound (Group III-V) semiconductor having a second energy bandgap that is larger than the first energy bandgap. In one embodiment the first compound semiconductor is a layer that overlies a first portion of the surface of the substrate and the substrate is the second compound semiconductor. In another embodiment the second compound semiconductor is provided as a second layer that overlies a second portion of the surface of the substrate. Methods to form the structure are also disclosed.
Public/Granted literature
- US20150044859A1 COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD TO FABRICATE SAME Public/Granted day:2015-02-12
Information query
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