Invention Grant
- Patent Title: Quantum cascade laser
- Patent Title (中): 量子级联激光器
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Application No.: US14520500Application Date: 2014-10-22
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Publication No.: US09276381B2Publication Date: 2016-03-01
- Inventor: Atsushi Sugiyama , Tadataka Edamura , Naota Akikusa
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-223262 20131028
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/028 ; H01S5/02 ; H01S5/22

Abstract:
A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.
Public/Granted literature
- US20150117484A1 QUANTUM CASCADE LASER Public/Granted day:2015-04-30
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