Invention Grant
- Patent Title: Infrared sensor
- Patent Title (中): 红外传感器
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Application No.: US14003743Application Date: 2012-03-21
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Publication No.: US09279729B2Publication Date: 2016-03-08
- Inventor: Kenzo Nakamura , Mototaka Ishikawa , Gakuji Uozumi
- Applicant: Kenzo Nakamura , Mototaka Ishikawa , Gakuji Uozumi
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2011-076767 20110330
- International Application: PCT/JP2012/001916 WO 20120321
- International Announcement: WO2012/132316 WO 20121004
- Main IPC: G01J5/02
- IPC: G01J5/02 ; G01J5/10 ; G01J5/20 ; G01J5/06 ; H01L37/02

Abstract:
A lightweight infrared sensor which is readily and stably erected to a substrate, the infrared sensor includes an insulating film; a first and second heat sensitive element are disposed on one surface of the insulating film separately; a first and second conductive film on one surface of the insulating film and are respectively connected to the first and the second heat sensitive element; an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element; a reinforcing plate on which a sensor part window corresponding to a sensor part is formed and which is adhered to the insulating film; and a first and a second terminal electrode are respectively connected to the first and the second wiring film and formed on the edge of the insulating film.
Public/Granted literature
- US20140061468A1 INFRARED SENSOR Public/Granted day:2014-03-06
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