Invention Grant
- Patent Title: Gas sensor
- Patent Title (中): 气体传感器
-
Application No.: US13855805Application Date: 2013-04-03
-
Publication No.: US09279782B2Publication Date: 2016-03-08
- Inventor: Chen-Chia Chou , Tsung-Her Yeh , Wei-Wei Duan , Jyh-Shiarn Cherng , Ruei-De Lin
- Applicant: National Taiwan University of Science and Technology
- Applicant Address: TW Taipei
- Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas, PLLC
- Priority: TW101134669A 20120921
- Main IPC: G01N27/407
- IPC: G01N27/407

Abstract:
A gas sensor comprises a layered structure with an ionic conductive film and a high gas-permeability interlayer film, a first catalyst electrode and a second catalyst electrode, a conductivity promotion structure, a high-k layer and a current detecting unit. The ionic conductive film includes a material with ionic conductivity ranging from 0.02 to 1000 S/cm. The first catalyst electrode and second catalyst electrode are located on the layered structure and spaced by a predetermined distance for ionizing a gas and reducing the ionized gas, respectively. The conductivity promotion structure includes a material with electronic conductivity ranging from 10−5 to 105 S/cm, and provides wanted electrons for a reduction reaction. The high-k layer is interposed between the conductivity promotion structure and layered structure. The current detecting unit is coupled to the first catalyst electrode and second catalyst electrode to sense a detecting current with respect to the ionized gas.
Public/Granted literature
- US20140083851A1 GAS SENSOR Public/Granted day:2014-03-27
Information query