Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US14381572Application Date: 2013-11-08
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Publication No.: US09281276B2Publication Date: 2016-03-08
- Inventor: Tatsuya Usami , Yukio Miura , Hideaki Tsuchiya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- International Application: PCT/JP2013/080195 WO 20131108
- International Announcement: WO2015/068251 WO 20150514
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/532 ; H01L21/321 ; H01L21/768 ; H01L21/02 ; H01L21/263 ; H01L21/265 ; H01L23/528
Abstract:
A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.
Public/Granted literature
- US20150228586A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2015-08-13
Information query
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