Invention Grant
US09305772B2 Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
有权
具有特定位错密度，氧/电子浓度和有源层厚度的III族氮化物半导体的电子器件
- Patent Title: Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
- Patent Title (中): 具有特定位错密度，氧/电子浓度和有源层厚度的III族氮化物半导体的电子器件
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Application No.: US14460097Application Date: 2014-08-14
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Publication No.: US09305772B2Publication Date: 2016-04-05
- Inventor: Tadao Hashimoto
- Applicant: SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
- Applicant Address: US CA Buellton KR Seoul
- Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee Address: US CA Buellton KR Seoul
- Agency: Stategic Innovation IP Law Offices, P.C.
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L29/207 ; H01L29/78 ; H01L29/812 ; C23C16/30 ; H01L29/861 ; H01L29/872 ; H01L29/201 ; H01L29/417 ; H01L29/06 ; H01L29/205
Abstract:
The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
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