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US09306264B2 Transition between a microstrip protruding into an end of a closed waveguide having stepped sidewalls 有权
突出到具有阶梯状侧壁的封闭波导的端部的微带之间的转变

Transition between a microstrip protruding into an end of a closed waveguide having stepped sidewalls
Abstract:
A transition (100, 300) from microstrip to waveguide, the waveguide comprising first (120) and second (105, 105′, 105″) interior surfaces connected by side walls (115, 116) whose height (h1, h2, h3) is the shortest distance between said interior surfaces, and a microstrip structure (130, 135, 110) extending into the closed waveguide (105). The microstrip structure comprises a microstrip conductor (130, 135) on a dielectric layer arranged on said first interior surface. The microstrip conductor (130, 135) comprises and is terminated inside the closed waveguide by a patch (135). The height (h1) of the side walls (115, 116) along the distance that the microstrip conductor (130, 135) extends into the closed waveguide (105) being less than half of the greatest height (h3) beyond the microstrip structure's protrusion into the closed waveguide (105).
Abstract(Chinese):

从微带到波导的过渡（100,300），所述波导包括通过侧壁（115,116）连接的第一（120）和第二（105,105'，105“）内表面，所述侧壁的高度（h1，h2，h3） 是所述内表面之间的最短距离，以及延伸到封闭波导（105）中的微带结构（130,135,110）。 微带结构包括在布置在所述第一内表面上的电介质层上的微带导体（130,135）。 微带导体（130,135）包括并通过贴片（135）封闭在封闭波导内。 沿着微带导体（130,135）延伸到闭合波导（105）的距离，侧壁（115,116）的高度（h1）小于微带结构突起的最大高度（h3）的一半 进入闭合波导（105）。

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