Invention Grant
- Patent Title: Focused ion beam apparatus and method of working sample using the same
- Patent Title (中): 聚焦离子束装置及其使用方法
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Application No.: US14221611Application Date: 2014-03-21
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Publication No.: US09310325B2Publication Date: 2016-04-12
- Inventor: Ikuko Nakatani , Makoto Sato
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-067320 20130327; JP2014-048446 20140312
- Main IPC: G01N23/225
- IPC: G01N23/225 ; H01J37/304 ; H01J37/305 ; G01N1/32

Abstract:
A focused ion beam apparatus includes an image generation unit that generates a sample image including location detection marks formed on a sample based on secondary charged particles generated from the sample by emission of a focused ion beam to the sample, and a display that which displays a sample image. A control unit which, in a case of performing working by emitting the focused ion beam to a working region of the sample that is beyond a display range, moves a sample stage, detects locations of the location detection marks included in the sample image after the movement of the sample stage as reference marks from the location detection marks included in the sample image before moving the sample stage, and controls an emission location of the focused ion beam based on the reference marks detected in the sample image after movement of the sample stage to correct a working location shift due to movement of the sample stage.
Public/Granted literature
- US20140291512A1 FOCUSED ION BEAM APPARATUS AND METHOD OF WORKING SAMPLE USING THE SAME Public/Granted day:2014-10-02
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