Invention Grant
- Patent Title: Cold field electron emitters based on silicon carbide structures
- Patent Title (中): 基于碳化硅结构的冷场电子发射体
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Application No.: US14518253Application Date: 2014-10-20
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Publication No.: US09324534B2Publication Date: 2016-04-26
- Inventor: Fred Sharifi , Myung-Gyu Kang , Henri Lezec
- Applicant: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Applicant Address: US DC Washington
- Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee Address: US DC Washington
- Agency: Rankin, Hill & Clark LLP
- Agent Mark E. Bandy
- Main IPC: H01J9/00
- IPC: H01J9/00 ; H01J1/304 ; C25F3/02 ; H01J9/02 ; B82Y30/00 ; B82Y40/00 ; B82Y99/00
Abstract:
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
Public/Granted literature
- US20150061487A1 COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES Public/Granted day:2015-03-05
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