Invention Grant
US09324645B2 Method and system for co-packaging vertical gallium nitride power devices 有权
用于共包装垂直氮化镓电力器件的方法和系统

Method and system for co-packaging vertical gallium nitride power devices
Abstract:
An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is electrically connected to the leadframe.
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