Invention Grant
US09324809B2 Method and system for interleaved boost converter with co-packaged gallium nitride power devices
有权
具有共同封装的氮化镓功率器件的交错式升压转换器的方法和系统
- Patent Title: Method and system for interleaved boost converter with co-packaged gallium nitride power devices
- Patent Title (中): 具有共同封装的氮化镓功率器件的交错式升压转换器的方法和系统
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Application No.: US14083217Application Date: 2013-11-18
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Publication No.: US09324809B2Publication Date: 2016-04-26
- Inventor: Hemal N. Shah , Donald R. Disney
- Applicant: AVOGY, INC.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/20 ; H01L23/00 ; H01L23/36
Abstract:
An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the anode of the second GaN diode is electrically connected to the leadframe.
Public/Granted literature
- US20150137134A1 METHOD AND SYSTEM FOR INTERLEAVED BOOST CONVERTER WITH CO-PACKAGED GALLIUM NITRIDE POWER DEVICES Public/Granted day:2015-05-21
Information query
IPC分类:
