Invention Grant
- Patent Title: Process for removing nonmetallic impurities from metallurgical silicon
- Patent Title (中): 从冶金硅中除去非金属杂质的工艺
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Application No.: US13057084Application Date: 2009-07-29
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Publication No.: US09327987B2Publication Date: 2016-05-03
- Inventor: Seyed-Javad Mohsseni-Ala , Christian Bauch , Rumen Deltschew , Thoralf Gebel , Gerd Lippold , Matthias Heuer , Fritz Kirscht , Kamel Ounadjela
- Applicant: Seyed-Javad Mohsseni-Ala , Christian Bauch , Rumen Deltschew , Thoralf Gebel , Gerd Lippold , Matthias Heuer
- Applicant Address: LU Luxembourg
- Assignee: SPAWNT PRIVATE S.A.R.L.
- Current Assignee: SPAWNT PRIVATE S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: VLP Law Group LLP
- Agent Enshan Hong; Kent H. Cheng
- Priority: DE102008036143 20080801
- International Application: PCT/DE2009/001059 WO 20090729
- International Announcement: WO2010/012273 WO 20100204
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C01B33/037 ; C30B29/06 ; C30B11/00 ; C30B15/00 ; C30B15/34
Abstract:
The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.
Public/Granted literature
- US20130171052A1 Process for Removing Nonmetallic Impurities from Metallurgical Silicon Public/Granted day:2013-07-04
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