Invention Grant
- Patent Title: Method of stack patterning using a ion etching
- Patent Title (中): 使用离子蚀刻的叠层图案化方法
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Application No.: US13174132Application Date: 2011-06-30
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Publication No.: US09330885B2Publication Date: 2016-05-03
- Inventor: Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Li-Ping Wang
- Applicant: Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Li-Ping Wang
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/00 ; C03C15/00 ; C03C25/68 ; H01L21/302 ; H01L21/461 ; H01J37/30 ; H01J37/305
Abstract:
The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
Public/Granted literature
- US20130001195A1 METHOD OF STACK PATTERNING USING A ION ETCHING Public/Granted day:2013-01-03
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