Invention Grant
US09330902B1 Method for forming HfOx film based on atomic layer deposition (ALD) process
有权
基于原子层沉积（ALD）工艺形成HfOx薄膜的方法
- Patent Title: Method for forming HfOx film based on atomic layer deposition (ALD) process
- Patent Title (中): 基于原子层沉积（ALD）工艺形成HfOx薄膜的方法
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Application No.: US14731227Application Date: 2015-06-04
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Publication No.: US09330902B1Publication Date: 2016-05-03
- Inventor: Tsai-Yu Wen , Shih-Cheng Chen , Shan Ye , Tsuo-Wen Lu , Yu-Ren Wang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/02 ; H01L29/66 ; H01L29/51 ; H01L21/28
Abstract:
A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.
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