Invention Grant
- Patent Title: Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
- Patent Title (中): 逻辑单元包括具有两个不同反铁磁层的磁性隧道结元件
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Application No.: US14274601Application Date: 2014-05-09
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Publication No.: US09331123B2Publication Date: 2016-05-03
- Inventor: Yakov Roizin , Avi Strum
- Applicant: Tower Semiconductor Ltd.
- Applicant Address: IL Migdal Haemek
- Assignee: Tower Semiconductor Ltd.
- Current Assignee: Tower Semiconductor Ltd.
- Current Assignee Address: IL Migdal Haemek
- Agency: Bever, Hoffman & Harms, LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H03K19/003 ; G11C11/15

Abstract:
A logic unit for security engines or content addressable memory including Magnetic Tunnel Junction (MTJ) elements connected in series to form a NAND-type string, where each MTJ element includes a storage layer and a sense layer having different anti-ferromagnetic materials respectively having higher and lower blocking temperatures. During write/program, the string is heated above the higher blocking temperature, and magnetic fields are used to store bit values of a confidential logical pattern in the storage layers. The string is then cooled to an intermediate temperature between the higher and lower blocking temperatures and the field lines turned off to store bit-bar (opposite) values in the sense layers. During a pre-compare operation, the MTJ elements are heated to the intermediate temperature, and an input logical pattern is stored in the sense layers. During a compare operation, with the field lines off, a read current is passed through the string and measured.
Public/Granted literature
- US20150325624A1 Logic Unit Including Magnetic Tunnel Junction Elements Having Two Different Anti-Ferromagnetic Layers Public/Granted day:2015-11-12
Information query
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