Invention Grant
- Patent Title: CMOS structure on replacement substrate
- Patent Title (中): 更换基板上的CMOS结构
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Application No.: US13773014Application Date: 2013-02-21
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Publication No.: US09331141B2Publication Date: 2016-05-03
- Inventor: Paul S. Andry , Edmund J. Sprogis , Cornelia K. Tsang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/20 ; H01L21/683 ; H01L21/762 ; H01L21/822 ; H01L27/06
Abstract:
CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The method further includes removing the temporary substrate. The method further includes bonding a permanent electrically insulative substrate to the device with a bonding structure.
Public/Granted literature
- US20130221479A1 CMOS STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2013-08-29
Information query
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