Invention Grant
- Patent Title: Semiconductor device and power conversion device
- Patent Title (中): 半导体器件和电源转换器件
-
Application No.: US14500043Application Date: 2014-09-29
-
Publication No.: US09331572B2Publication Date: 2016-05-03
- Inventor: Hiroshi Inada , Tatsuo Morita
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-101099 20120426
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H02M3/156 ; H01L29/417 ; H01L29/20 ; H01L29/739 ; H01L29/778 ; H01L25/07 ; H01L27/06 ; H03K17/16 ; H01L29/10 ; H02M1/08 ; H02M1/00 ; H02M3/158 ; H02M7/00
Abstract:
A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.
Public/Granted literature
- US20150014746A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2015-01-15
Information query
IPC分类:
