Invention Grant
- Patent Title: Electron beam data storage system and method for high volume manufacturing
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Application No.: US14491455Application Date: 2014-09-19
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Publication No.: US09336986B2Publication Date: 2016-05-10
- Inventor: Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and boone
- Main IPC: H01J37/302
- IPC: H01J37/302 ; G03F1/20 ; H01J37/317 ; G03F1/36 ; G03F7/20 ; B82Y10/00 ; B82Y40/00

Abstract:
The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.
Public/Granted literature
- US20150008343A1 Electron Beam Data Storage System and Method for High Volume Manufacturing Public/Granted day:2015-01-08
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