Invention Grant
- Patent Title: Aluminum nitride based semiconductor devices
- Patent Title (中): 氮化铝基半导体器件
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Application No.: US14367385Application Date: 2012-12-21
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Publication No.: US09337301B2Publication Date: 2016-05-10
- Inventor: Tomas Apostol Palacios , Tatsuya Fujishima
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2012/071342 WO 20121221
- International Announcement: WO2013/096821 WO 20130627
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/201 ; H01L29/812 ; H01L29/20 ; H01L29/205
Abstract:
Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by exploiting the polar nature of AIN materials. Embodiments of AIN transistors utilizing polarization-based carrier confinement are described.
Public/Granted literature
- US20150028346A1 ALUMINUM NITRIDE BASED SEMICONDUCTOR DEVICES Public/Granted day:2015-01-29
Information query
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