Invention Grant
- Patent Title: Abnormal H-bridge gate voltage detection
- Patent Title (中): 异常H桥门电压检测
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Application No.: US14218438Application Date: 2014-03-18
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Publication No.: US09337749B2Publication Date: 2016-05-10
- Inventor: Katsumi Inoue , Atsushi Yamada
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-061555 20130325
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M7/5387 ; H02M1/32 ; H03K17/082 ; G01R31/40 ; H02P29/02
Abstract:
An electronic circuit includes a failure detection circuit that detects an abnormality of the gate potential of a transistor of a bridge circuit. The failure detection circuit monitors an output voltage of a drive circuit that is to be the gate potential of the transistor of the bridge circuit and, when detecting an abnormality, stops the drive circuit.
Public/Granted literature
- US20140286061A1 CIRCUIT DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2014-09-25
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