Invention Grant
- Patent Title: Capacitive shear force sensor and method for fabricating thereof
- Patent Title (中): 电容式剪切力传感器及其制造方法
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Application No.: US13896333Application Date: 2013-05-17
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Publication No.: US09347838B2Publication Date: 2016-05-24
- Inventor: Sheng-Jui Chen , Gwo-Jen Wu , Chung-Lin Wu , Jian-Lin Huang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW101148793A 20121220
- Main IPC: G01L1/14
- IPC: G01L1/14 ; G01L5/22 ; B25J13/08

Abstract:
A capacitive shear force sensor and a method for fabricating thereof are provided. The capacitive shear force sensor includes a first electric field shielding layer, a second electric field shielding layer, a driving electrode, a first sensing electrode, a second sensing electrode and a dielectric layer. The second electric field shielding layer is disposed under the first electric field shielding layer. The driving electrode is disposed between the first electric field shielding layer and the second electric field shielding layer. The first and the second sensing electrodes are disposed between the driving electrode and the second electric field shielding layer. The dielectric layer is disposed between the driving electrode and the first sensing electrode, and between the driving electrode and the second sensing electrode. The first sensing electrode and the driving electrode form a first capacitor. The second sensing electrode and the driving electrode form a second capacitor.
Public/Granted literature
- US20140174204A1 CAPACITIVE SHEAR FORCE SENSOR AND METHOD FOR FABRICATING THEREOF Public/Granted day:2014-06-26
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