Invention Grant
- Patent Title: Semiconductor device with transistor local interconnects
- Patent Title (中): 具有晶体管局部互连的半导体器件
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Application No.: US13324740Application Date: 2011-12-13
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Publication No.: US09355910B2Publication Date: 2016-05-31
- Inventor: Mahbub Rashed , Irene Y. Lin , Steven Soss , Jeff Kim , Chinh Nguyen , Marc Tarabbia , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant: Mahbub Rashed , Irene Y. Lin , Steven Soss , Jeff Kim , Chinh Nguyen , Marc Tarabbia , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8234 ; H01L27/02 ; H01L21/768 ; H01L27/118
Abstract:
A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors comprises a source, a drain, and a gate. A trench silicide layer electrically connects one of the source or the drain of the first transistor to one of the source or the drain of the second transistor.
Public/Granted literature
- US20130146986A1 SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS Public/Granted day:2013-06-13
Information query
IPC分类:
