Invention Grant
US09355914B1 Integrated circuit having dual material CMOS integration and method to fabricate same
有权
具有双重材料CMOS集成的集成电路及其制造方法
- Patent Title: Integrated circuit having dual material CMOS integration and method to fabricate same
- Patent Title (中): 具有双重材料CMOS集成的集成电路及其制造方法
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Application No.: US14745999Application Date: 2015-06-22
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Publication No.: US09355914B1Publication Date: 2016-05-31
- Inventor: Effendi Leobandung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. PPercello
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8238 ; H01L29/66 ; H01L21/84 ; H01L29/16 ; H01L29/04 ; H01L21/31 ; H01L21/3213 ; H01L21/306 ; H01L21/02 ; H01L21/283 ; H01L21/311 ; H01L29/201 ; H01L29/78 ; H01L29/06 ; H01L27/092 ; H01L21/324 ; H01L21/265
Abstract:
In one aspect thereof the invention provides a structure that includes a substrate having a surface and a plurality of fins supported by the surface of the substrate. The plurality of fins are formed of Group IVA-based crystalline semiconductor material and are spaced apart and generally parallel to one another. In the structure at least some of the plurality of fins comprise an amorphous region forming a nanowire precursor structure that is located along a length of the fin where a Group III-V transistor is to be located. A method to fabricate the structure and other structures is also disclosed.
Information query
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