Invention Grant
US09359666B2 Rapid crystallization of heavily doped metal oxides and products produced thereby
有权
重掺杂金属氧化物的快速结晶和由此产生的产品
- Patent Title: Rapid crystallization of heavily doped metal oxides and products produced thereby
- Patent Title (中): 重掺杂金属氧化物的快速结晶和由此产生的产品
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Application No.: US13256300Application Date: 2010-02-18
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Publication No.: US09359666B2Publication Date: 2016-06-07
- Inventor: Jian-Ku Shang , Qi Li
- Applicant: Jian-Ku Shang , Qi Li
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Brinks Gilson & Lione
- International Application: PCT/US2010/024540 WO 20100218
- International Announcement: WO2010/104656 WO 20100916
- Main IPC: C04B41/50
- IPC: C04B41/50 ; C03C17/00 ; C03C8/20 ; B01J35/00 ; C23C14/06 ; C01G19/02 ; C01G23/047 ; C23C14/08 ; C23C14/34 ; C23C14/58 ; C30B1/02 ; C30B29/16 ; C01B13/14
Abstract:
A method of making a doped metal oxide comprises heating a first doped metal oxide with a laser, to form a crystallized doped metal oxide. The crystallized doped metal oxide has a different crystal structure than the first doped metal oxide.
Public/Granted literature
- US20120001172A1 RAPID CRYSTALLIZATION OF HEAVILY DOPED METAL OXIDES AND PRODUCTS PRODUCED THEREBY Public/Granted day:2012-01-05
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