Invention Grant
US09362405B1 Channel cladding last process flow for forming a channel region on a FinFET device 有权
沟道包层最后工艺流程,用于在FinFET器件上形成沟道区

Channel cladding last process flow for forming a channel region on a FinFET device
Abstract:
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming an initial epi semiconductor cladding material around the exposed portion of a fin for an entire axial length of the fin, forming a sacrificial gate structure around a portion of the fin and the initial cladding material, removing the sacrificial gate structure so as to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to remove at least the exposed portion of the initial cladding material and thereby expose a surface of the fin within the replacement gate cavity, forming at least one replacement epi semiconductor cladding material around the exposed surface of the fin, and forming a replacement gate structure within the replacement gate cavity around the at least one replacement epi semiconductor cladding material.
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