Invention Grant
US09362405B1 Channel cladding last process flow for forming a channel region on a FinFET device
有权
沟道包层最后工艺流程,用于在FinFET器件上形成沟道区
- Patent Title: Channel cladding last process flow for forming a channel region on a FinFET device
- Patent Title (中): 沟道包层最后工艺流程,用于在FinFET器件上形成沟道区
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Application No.: US14560361Application Date: 2014-12-04
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Publication No.: US09362405B1Publication Date: 2016-06-07
- Inventor: Ajey Poovannummoottil Jacob , Witold P. Maszara , Jody A. Fronheiser
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/3213 ; H01L21/02 ; H01L29/161 ; H01L29/201

Abstract:
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming an initial epi semiconductor cladding material around the exposed portion of a fin for an entire axial length of the fin, forming a sacrificial gate structure around a portion of the fin and the initial cladding material, removing the sacrificial gate structure so as to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to remove at least the exposed portion of the initial cladding material and thereby expose a surface of the fin within the replacement gate cavity, forming at least one replacement epi semiconductor cladding material around the exposed surface of the fin, and forming a replacement gate structure within the replacement gate cavity around the at least one replacement epi semiconductor cladding material.
Public/Granted literature
- US20160163863A1 CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON A FINFET DEVICE Public/Granted day:2016-06-09
Information query
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