In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting the spatial and time resolution of electron beam and ion beam devices. Optical to optical measurements using two imaging devices permits non-invasive or non-destructive enhancements permits enhanced spatial and time measurements and enables a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.