Invention Grant
- Patent Title: Stacked microelectronic assembly with TSVs formed in stages with plural active chips
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Application No.: US14811177Application Date: 2015-07-28
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Publication No.: US09368476B2Publication Date: 2016-06-14
- Inventor: Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
- Applicant: Tessera, Inc.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L25/00 ; H01L23/00 ; H01L21/768 ; H01L23/48 ; H01L25/065 ; H01L23/31
Abstract:
A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.
Public/Granted literature
- US20150333050A1 STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES WITH PLURAL ACTIVE CHIPS Public/Granted day:2015-11-19
Information query
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